AlGaAs/GaAs heterostructure-emitter bipolar transistor (HEBT) prepared by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference18 articles.
1. (GaAl)As‐GaAs heterojunction transistors with high injection efficiency
2. Interfacial properties of (Al,Ga)As/GaAs structures: Effect of substrate temperature during growth by molecular beam epitaxy
3. Diffused epitaxial GaAlAs‐GaAs heterojunction bipolar transistor for high‐frequency operation
4. GaAs/AlGaAs heterojunction bipolar transistors for integrated circuit applications
5. GaAs/GaAlAs heterojunction bipolar transistors with cutoff frequencies above 10 GHz
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1. Multiple negative-differential-resistance switches based on an InGaP/GaAs/InGaAs step-compositional-emitter bipolar transistor for multiple-valued logic application;Solid-State Electronics;2005-03
2. Application of InGaP/GaAs/InGaAs step-compositional-emitter structures for multiple-route switch;Semiconductor Science and Technology;2005-01-06
3. Investigation of InP/InGaAs superlattice-emitter resonant tunneling bipolar transistors (RTBTs);Superlattices and Microstructures;2001-02
4. A novel resonant tunneling base transistor with bi-directional negative-differential-resistance phenomena;Solid-State Electronics;2000-06
5. Functional heterostructure-emitter bipolar transistor (HEBT) with graded-confinement and pseudomorphic-base structure;Superlattices and Microstructures;1998-09
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