Ohmic contact to n-type bulk and δ doped Al0.3Ga0.7As/GaAs MODFET type heterostructures and its applications
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference18 articles.
1. Metal-semiconductor contacts for GaAs bulk effect devices
2. Characteristics of AuGeNi ohmic contacts to GaAs
3. Ohmic contacts to III–V compound semiconductors: A review of fabrication techniques
4. Alloyed ohmic contacts to GaAs
5. Contact and metallization problems in GaAs integrated circuits
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1. Characterization of low-resistance ohmic contacts to a two-dimensional electron gas in a GaAs/AlGaAs heterostructure;The European Physical Journal Applied Physics;2020-02
2. Application of atomic–force microscope for creation of one–dimensional structure on the basis of GaAs/AlGaAs heterostructure;Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering;2019-06-20
3. Use of atomic force microscope for the synthesis of GaAs/AlGaAs heterostructure base one-dimensional structure;Modern Electronic Materials;2018-12-01
4. Features of Creating Ohmic Contacts for GaAs/AlGaAs Heterostructures with a Two-Dimensional Electron Gas;Russian Microelectronics;2017-12
5. Evolution of surface morphology of alloyed AuGe/Ni/Au ohmic contacts to GaAs microwave FETs;Materials Science in Semiconductor Processing;2015-02
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