Superposition solution for minority carrier current in the emitter of bipolar devices-Reference-Cited by-同舟云学术

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Superposition solution for minority carrier current in the emitter of bipolar devices

Published:1992-04 Issue:4 Volume:35 Page:529-533
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Alcubilla R.,Pons J.,Castañer L.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. Review of analytical models for the study of highly doped regions of silicon devices

2. Modelling of minority-carrier transport in heavily doped silicon emitters

3. Systematic analytical solutions for minority-carrier transport in semiconductors with position-dependent composition, with application to heavily doped silicon

4. 18th IEEE Int. Photovoltaic Conf.;Rover,1985

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