Band discontinuity and effects of Si-insertion layer at (311)A GaAs/AlAs interface
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference13 articles.
1. Modification of heterojunction band offsets by thin layers at interfaces: Role of the interface dipole
2. Tuning band offsets at semiconductor interfaces by intralayer deposition
3. Tuning AlAs-GaAs band discontinuities and the role of Si-induced local interface dipoles
4. Proc. of the 21st Int. Conf. on the Physics of Semiconductors;Hashimoto,1992
5. Proc. of 19th Int. Symp. GaAs and Related Compounds;Hashimoto,1992
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1. Universal rule of revealing energy-band diagrams at various semiconductor interfaces: The influence of film thickness and dielectric constants;Journal of Applied Physics;2023-07-07
2. Band discontinuities at the (100) interfaces with In- and P-insertion layers: Effects of isoelectronic impurity layers;Solid State Communications;1997-01
3. Heterojunction band offset engineering;Surface Science Reports;1996
4. Anisotropic magnetotransport in two-dimensional electron gases on (311)B GaAs substrates;Journal of Physics: Condensed Matter;1994-08-01
5. Band discontinuity in GaAs/AlAs superlattices with InAs strained insertion-layers;Superlattices and Microstructures;1994-06
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