Formulation of surface noise processes in bipolar junction transistors and in p−n diodes in Hooge-type form-Reference-Cited by-同舟云学术

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Formulation of surface noise processes in bipolar junction transistors and in p−n diodes in Hooge-type form

Published:1989-01 Issue:1 Volume:32 Page:91-93
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

van der Ziel A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. 1/ƒ noise is no surface effect

2. Transistors I;Fonger,1956

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1. Preface;Specular Gloss;2008

2. References;Specular Gloss;2008

3. An Investigation of Dose Rate and Source Dependent Effects in 200 GHz SiGe HBTs;IEEE Transactions on Nuclear Science;2006-12

4. Dc and low frequency noise analysis of hot-carrier induced degradation of low complexity 0.13 μm CMOS bipolar transistors;Microelectronics Reliability;2005-09

5. Origin of 1/f noise in lateral PNP bipolar transistors;Microelectronics Reliability;2004-01

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