A monolithic integrated schottky diode for microwave mixers

Author:

Wortmann Alois K.,Kohn Erhard E.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference6 articles.

1. Feldeffekttransistoren mit Elektroden an der Flanke einer Epitaxieschicht;Beneking,1972

2. H. Beneking, Proc. 1971 Europ. Microwave Conf. Stockholm.

3. Reflektionsfaktor und Impedanzbestimmung aus Transmissionsmessurnen im Mikrowellenbereich;Piller;Arch. Electron. and Übertragungstechnik,1975

4. Proc. of the 4th Europ. Microwave Conf. Montreux;Wortmann,1974

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1. Multi-channel AlGaN/GaN Schottky barrier diodes with a half through-hole;Materials Science in Semiconductor Processing;2021-10

2. Formation of planar n+pockets in GaAs for mixer diode fabrication;IEEE Transactions on Electron Devices;1984-08

3. Fabrication and Characterization of Metal-Semiconductor Schottky Barrier Junctions;Metal-Semiconductor Schottky Barrier Junctions and Their Applications;1984

4. High-performance millimetre-wave mixer diodes fabricated using a deep mesa etch approach;Electronics Letters;1983

5. Design considerations for planar Schottky barrier diodes;Solid-State Electronics;1980-01

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