Modulated blue shift of the quantum well electroluminescence in a GaAs/AlAs superlattice resonant tunnelling device-Reference-Cited by-同舟云学术

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Modulated blue shift of the quantum well electroluminescence in a GaAs/AlAs superlattice resonant tunnelling device

Published:1994-04 Issue:4-6 Volume:37 Page:843-846
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Kuhn O.,Maude D.K.,Portal J.C.,Henini M.,Eaves L.,Hill G.,Pate M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Effect of an electric field on the luminescence of GaAs quantum wells

2. Optical properties of quantum wells and superlattices under electric fields

3. Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect

4. Magneto-optics in GaAs-Ga1−xAlxAs quantum wells

5. Electron transport in double-barrier resonant tunnelling structures studied by optical spectroscopy

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. ac response of bipolar double-barrier resonant-tunneling structures;Physical Review B;1998-10-15

2. Electroluminescence from double-barrier resonant-tunnelling structures;Semiconductor Science and Technology;1997-05-01

3. Γ-X Mixing studied by electroluminescence spectroscopy under hydrostatic pressure in a GaAs/AlAs p-i-n superlattice resonant tunnelling device;Journal of Physics and Chemistry of Solids;1995-03

4. Electroluminescence in p-i-n double-barrier resonant tunnelling structures;Microelectronics Journal;1994-11

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