Si/SiGe HBTs for application in low power ICs-Reference-Cited by-同舟云学术

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Si/SiGe HBTs for application in low power ICs

Published:1996-04 Issue:4 Volume:39 Page:471-480
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Behammer D.,Albers J.N.,König U.,Temmler D.,Knoll D.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. BCTM Proc.;Kermarrec,1994

2. Structure, properties and applications of GexSi1-xstrained layers and superlattices

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1. Structure and property of Ge/Si nanomultilayers prepared by magnetron sputtering;Surface and Coatings Technology;2009-12

2. Electrodeposition of Nanoscale SixGe1-x from an Air- and Water Stable Ionic Liquid;ECS Transactions;2008-10-03

3. Electrodeposition of Ge, Si and SixGe1−x from an air- and water-stable ionic liquid;Physical Chemistry Chemical Physics;2008

4. Ge-Si Alloys and Devices;Encyclopedia of RF and Microwave Engineering;2005-04-15

5. Emerging Advances in Microelectronics, Optoelectronics and Bioelectronics;Advanced Semiconductor and Organic Nano-Techniques;2003

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