PbS photodiodes fabricated by Sb+ ion implantation-Reference-Cited by-同舟云学术

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PbS photodiodes fabricated by Sb+ ion implantation

Published:1973-04 Issue:4 Volume:16 Page:529-534
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Donnelly J.P.,Harman T.C.,Foyt A.G.,Lindley W.T.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. p‐n Junction Photodiodes in PbTe Prepared by Sb+ Ion Implantation

2. Proc. of the Conference on the Physics of IV–VI Compounds and Alloys;Donnelly,1972

3. n‐p JUNCTION PHOTOVOLTAIC DETECTORS IN PbTe PRODUCED BY PROTON BOMBARDMENT

4. nGepGaAs Heterojunctions

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1. Mid-IR band gap engineering of CdxPb1−xS nanocrystals by mechanochemical reaction;AIP Advances;2014-06

2. Room temperature photocurrent response of PbS/InP heterojunction;Applied Physics Letters;2009-12-07

3. Study of Solution Grown Variable BandGap Pb[sub 1−x]Mn[sub x]S Semiconductor Nanoparticle Films;Journal of The Electrochemical Society;2006

4. Intrinsic infrared detectors;Progress in Quantum Electronics;1988-01

5. Sperrschichtphotodetektoren;Optoelektronik II;1986

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