Current-voltage relations and equivalent circuits of transistors at high injection levels
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference33 articles.
1. The effects of distributed base potential on emitter-current injection density and effective base resistance for stripe transistor geometries
2. A distributed model of the junction transistor and its application in the prediction of the emitter-base diode characteristic, base impedance, and pulse response of the device
3. A theory of transistor cutoff frequency (fT) falloff at high current densities
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Modelling of high-injection effects in bipolar devices;Microelectronics Journal;1997-01
2. Modeling of minority-carrier transport in semiconductor regions with position-dependent material parameters at arbitrary injection levels;IEEE Transactions on Electron Devices;1996
3. Charge‐injection theory of bipolar junction transistors;Journal of Applied Physics;1994-10
4. Correlation impedance in transistors at high injection;Solid-State Electronics;1983-09
5. Presence of mobility-fluctuation noise identified in silicon P+NP transistors;Solid-State Electronics;1983-01
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