Zener breakdown in alloyed germanium p+-n junctions
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference24 articles.
1. Electron Multiplication in Silicon and Germanium
2. A theory of the electrical breakdown of solid dielectrics
3. Observations of Zener Current in Germaniump−nJunctions
4. Avalanche Breakdown in Silicon
5. Internal Field Emission in Siliconp−nJunctions
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1. Required Donor Concentration of Epitaxial Layers for Efficient InGaAsP Avalanche Photodiodes;Japanese Journal of Applied Physics;1980-04
2. 200 GHz Tunnett Diodes;Japanese Journal of Applied Physics;1978-01-01
3. Electrical breakdown in semiconductors;Physica Status Solidi (a);1971-12-16
4. Zener and avalanche breakdown in silicon alloyed p-n junctions—I;Solid-State Electronics;1968-01
5. Study of Transistor Switching Circuit Stability in the Avalanche Region;IEEE Journal of Solid-State Circuits;1967-03
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