Low and small resistance hole-injection barrier for NPB realized by wide-gap p-type degenerate semiconductor, LaCuOSe:Mg-Reference-Cited by-同舟云学术

Low and small resistance hole-injection barrier for NPB realized by wide-gap p-type degenerate semiconductor, LaCuOSe:Mg

Published:2008-10 Issue:5 Volume:9 Page:890-894
ISSN:1566-1199
Container-title:Organic Electronics
language:en
Short-container-title:Organic Electronics

Author:

Yanagi Hiroshi,Kikuchi Maiko,Kim Ki-Beom,Hiramatsu Hidenori,Kamiya Toshio,Hirano Masahiro,Hosono Hideo

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Condensed Matter Physics,General Chemistry,Biomaterials,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Work function of indium tin oxide transparent conductor measured by photoelectron spectroscopy

2. Modification of the hole injection barrier in organic light-emitting devices studied by ultraviolet photoelectron spectroscopy

3. CuPc buffer layer role in OLED performance: a study of the interfacial band energies

4. Dependence of indium–tin–oxide work function on surface cleaning method as studied by ultraviolet and x-ray photoemission spectroscopies

5. P-type electrical conduction in transparent thin films of CuAlO2

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