The polymer gate dielectrics and source-drain electrodes on n-type pentacene-based organic field-effect transistors-Reference-Cited by-同舟云学术

The polymer gate dielectrics and source-drain electrodes on n-type pentacene-based organic field-effect transistors

Published:2010-10 Issue:10 Volume:11 Page:1613-1619
ISSN:1566-1199
Container-title:Organic Electronics
language:en
Short-container-title:Organic Electronics

Author:

Chang Jer-Wei,Hsu Wei-Lieh,Wu Chang-Yo,Guo Tzung-Fang,Wen Ten-Chin

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Condensed Matter Physics,General Chemistry,Biomaterials,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. Organic Heterostructure Field-Effect Transistors

2. Soluble and processable regioregular poly(3‐hexylthiophene) for thin film field‐effect transistor applications with high mobility

3. Pentacene-based organic thin-film transistors

4. High-Resolution Inkjet Printing of All-Polymer Transistor Circuits

5. Effects of film morphology and gate dielectric surface preparation on the electrical characteristics of organic-vapor-phase-deposited pentacene thin-film transistors

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