Thermal annealing effect on the crack development and the stability of 6,13-bis(triisopropylsilylethynyl)-pentacene field-effect transistors with a solution-processed polymer insulator-Reference-Cited by-同舟云学术

Thermal annealing effect on the crack development and the stability of 6,13-bis(triisopropylsilylethynyl)-pentacene field-effect transistors with a solution-processed polymer insulator

Published:2010-05 Issue:5 Volume:11 Page:784-788
ISSN:1566-1199
Container-title:Organic Electronics
language:en
Short-container-title:Organic Electronics

Author:

Bae Jin-Hyuk,Park Jaehoon,Keum Chang-Min,Kim Won-Ho,Kim Min-Hoi,Kim Seul-Ong,Kwon Soon Ki,Lee Sin-Doo

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Condensed Matter Physics,General Chemistry,Biomaterials,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Organic thin-film transistors for organic light-emitting flat-panel display backplanes

2. Organic Thin Film Transistors for Large Area Electronics

3. Stacked pentacene layer organic thin-film transistors with improved characteristics

4. High mobility of pentacene field-effect transistors with polyimide gate dielectric layers

5. High mobility solution processed 6,13-bis(triisopropyl-silylethynyl) pentacene organic thin film transistors

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