Highly-impermeable Al2O3/HfO2 moisture barrier films grown by low-temperature plasma-enhanced atomic layer deposition-Reference-Cited by-同舟云学术

Highly-impermeable Al2O3/HfO2 moisture barrier films grown by low-temperature plasma-enhanced atomic layer deposition

Published:2017-11 Issue: Volume:50 Page:296-303
ISSN:1566-1199
Container-title:Organic Electronics
language:en
Short-container-title:Organic Electronics

Author:

Kim Lae Ho,Jang Jin Hyuk,Jeong Yong Jin,Kim Kyunghun,Baek Yonghwa,Kwon Hyeok-jin,An Tae Kyu,Nam Sooji,Kim Se Hyun,Jang Jaeyoung,Park Chan Eon^ORCID

Funder

Korea Institute of Energy Technology Evaluation and Planning

Ministry of Knowledge Economy

Samsung Display Corporation

Global Frontier Research Program

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Condensed Matter Physics,General Chemistry,Biomaterials,Electronic, Optical and Magnetic Materials

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