Layer-by-layer printing non-volatile organic thin-film transistor memory with a planarly-oriented DNA-complex dielectric-Reference-Cited by-同舟云学术

Layer-by-layer printing non-volatile organic thin-film transistor memory with a planarly-oriented DNA-complex dielectric

Published:2018-04 Issue: Volume:55 Page:75-81
ISSN:1566-1199
Container-title:Organic Electronics
language:en
Short-container-title:Organic Electronics

Author:

Liang Lijuan^ORCID,Liu Xuying,Kanehara Masayuki,Kobayashi Norihisa,Minari Takeo

Funder

National Natural Science Foundation of China

Beijing Natural Science Foundation

China postdoctal science foundation

Beijing Municipal Education Commission

Grant-In-Aid for Scientific Research

Ministry of Education, Culture, Sport, Science, and Technology of Japan

Advanced Industrial Technology Development

NEDO

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Condensed Matter Physics,General Chemistry,Biomaterials,Electronic, Optical and Magnetic Materials

Reference28 articles.

1. All-Organic Permanent Memory Transistor Using an Amorphous, Spin-Cast Ferroelectric-like Gate Insulator

2. Organic field-effect transistors with polarizable gate insulators

3. Controllable Shifts in Threshold Voltage of Top-Gate Polymer Field-Effect Transistors for Applications in Organic Nano Floating Gate Memory

4. Non-volatile Ferroelectric Poly(vinylidene fluoride-co-trifluoroethylene) Memory Based on a Single-Crystalline Tri-isopropylsilylethynyl Pentacene Field-Effect Transistor

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