Interface effect in pentacene field-effect transistors from high energy proton beam irradiation-Reference-Cited by-同舟云学术

Interface effect in pentacene field-effect transistors from high energy proton beam irradiation

Published:2015-12 Issue: Volume:27 Page:240-246
ISSN:1566-1199
Container-title:Organic Electronics
language:en
Short-container-title:Organic Electronics

Author:

Kim Tae-Young,Jang Jingon,Cho Kyungjune,Song Younggul,Park Woanseo,Park Jinsu,Kim Jae-Keun,Hong Woong-Ki,Lee Takhee

Funder

Korean Ministry of Science

NRF

Ministry of Education

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Condensed Matter Physics,General Chemistry,Biomaterials,Electronic, Optical and Magnetic Materials

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2. Influence of gamma-ray irradiation and post-annealing studies on pentacene films: the anisotropic effects on structural and electronic properties;RSC Advances;2020

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