Silicon/organic hybrid heterojunction infrared photodetector operating in the telecom regime

Author:

Bednorz Mateusz,Matt Gebhard J.,Głowacki Eric D.,Fromherz Thomas,Brabec Christoph J.,Scharber Markus C.,Sitter Helmut,Sariciftci N. Serdar

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Condensed Matter Physics,General Chemistry,Biomaterials,Electronic, Optical and Magnetic Materials

Reference36 articles.

1. Fullerene sensitized silicon for near- to mid-infrared light detection;Matt;Advanced Materials (Deerfield Beach, Fla.),2010

2. Our choice from the recent literature, Nature Photonics 4(3) (2010) 128–129, doi: 10.1038/nphoton.2010.9. .

3. InPInGaAs pin photodiode structure maximising bandwidth and efficiency;Muramoto;Electronics Letters,2003

4. Cu/p-Si Schottky barrier-based near infrared photodetector integrated with a silicon-on-insulator waveguide;Casalino;Applied Physics Letters,2010

5. Optical power monitoring function compatible with single chip integration on silicon-on-insulator;Knights;Conference on Optical Fiber Communication,2003

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