Author:
Zhang Chuang,Wang Shihang,Chen Zhen,Zhang Haoran,Zha Xiaopeng,Zhou Fusheng,Li Jianying,Li Shengtao
Funder
National Natural Science Foundation of China
Subject
General Engineering,General Materials Science
Reference51 articles.
1. Junction temperature extraction approach with turnoff delay time for high-voltage high-power IGBT modules;Haoze;IEEE T. Power Electr.,2016
2. Power semiconductor devices for smart grid and renewable energy systems;Huang;Proc. of the IEEE,2017
3. Thermal contact resistance optimization of press-pack IGBT device based on liquid metal thermal interface material;Wang;IEEE T. Power Electr.,2021
4. Evaluation of ultrahigh-voltage 4H-SiC gate turn-off thyristors and insulated-gate bipolar transistors for high-power applications;Johannesson;IEEE T. Power Electr.,2021
5. Electric field mitigation in high-voltage high-power IGBT modules using nonlinear conductivity composites;Li;IEEE Trans. Compon. Packag. Manufact. Technol.,2021
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