Author:
Chen Ren-Chuen,Liu Jinn-Liang
Subject
Computer Science Applications,Physics and Astronomy (miscellaneous),Applied Mathematics,Computational Mathematics,Modelling and Simulation,Numerical Analysis
Reference34 articles.
1. H. Abebe, E. Cumberbatch, Quantum mechanical effects correction models for inversion charge and I–V characteristics of the MOSFET device, in: Proceedings of the 2003 Nanotechnology Conference, vol. 2, 2003, pp. 218–221
2. A finite element formulation for the hydrodynamic semiconductor device equations;Aluru;Comput. Methods Appl. Mech. Engrg.,1993
3. Quantum correction to the equation of state of an electron gas in a semiconductor;Ancona;Phys. Rev. B,1989
4. Macroscopic physics of the silicon inversion layer;Ancona;Phys. Rev. B,1987
5. Density-gradient analysis of MOS tunneling;Ancona;IEEE Trans. Electron. Dev.,2000
Cited by
16 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献