Semi insulating N-gallium nitride (GaN) on sapphire surface reflection dataset obtained at millimeter wave frequencies 107.35

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Semi insulating N-gallium nitride (GaN) on sapphire surface reflection dataset obtained at millimeter wave frequencies 107.35–165 GHz

Published:2020-12 Issue: Volume:33 Page:106419
ISSN:2352-3409
Container-title:Data in Brief
language:en
Short-container-title:Data in Brief

Author:

Roy Biswadev,Wu Marvin H.,Vlahovic Branislav

Funder

National Science Foundation

Publisher

Elsevier BV

Subject

Multidisciplinary

Reference9 articles.

1. Shedding the Light on Doping of Gallium Nitride;Lyons,2012

2. Two-photon absorption study of GaN;Sun;Appl. Phys. Lett.,2000

3. Reflection coefficient and optical conductivity of gallium nitride GaN;Akinlami;Semicond. Phys. Quantum Electron. Optoelectron.,2012

4. Advantages of near-field measurement when verifying 5G antenna designs;Co;Microw. J.,2016

5. Characterizing circuit materials at mmWave frequencies, application note;Coonrod;Microw. J.,2019

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