Substituted polyhydroxystyrenes as matrix resins for chemically amplified deep UV resist materials-Reference-Cited by-同舟云学术

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Substituted polyhydroxystyrenes as matrix resins for chemically amplified deep UV resist materials

Published:1991-03 Issue:1-4 Volume:13 Page:29-32
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Pawlowski Georg,Dammel Ralph,Eckes Charlotte,Lindley Charlet R.,Meier Winfried,Przybilla Klaus-Jürgen,Röschert Horst,Spiess Walter

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference6 articles.

1. Some resists based on chemically amplified crosslinking of phenolic polymers;Bohland;J. Photopol. Sci. Technol.,1990

2. 1xdeep UV lithography with chemical amplification for 1 μm DRAM production;Maltabes,1990

3. Materials and processes for deep UV lithography;Iwayanagi;Adv. Chem. Ser.,1988

4. Modified polyhydroxystyrenes as matrix resins for dissolution inhibition type photoresists;Pawlowski,1990

5. Przybilla, K., Röschert, H., Spieβ, W., Eckes, Ch., Pawlowski, G., and Dammel, R., Progress in DUV resins, to be published.

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Engineering microbial chemical factories to produce renewable “biomonomers”;Frontiers in Microbiology;2012

2. Hexafluoroacetone in resist chemistry;Advanced Materials;1992-03

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