Repair of opaque X-ray mask defects: Application and resolution-Reference-Cited by-同舟云学术

Repair of opaque X-ray mask defects: Application and resolution

Published:1991-03 Issue:1-4 Volume:13 Page:275-278
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Schaffer Holger,Breithaupt Bernd

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference3 articles.

1. B. Breithaupt, H.H. David, R. Ballhorn, E.P. Jacobs, W. Windbracke, G. Zwicker, “A 0.25 μm N-MOS Transistor Fabricated by X-ray Lithography”, to be published

2. Identification and Removal of Opaque Defects on X-ray Masks in a Focused Ion Beam Repair System;Weigmann,1987

3. Influence of X-ray Mask Repair on Pattern Placement Accuracy;Schaffer,1990

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photolithography;Materials Science and Technology;2013-02-15

2. Tunnelling through diamond-like carbon nanofilms deposited by electron-beam-induced deposition;Thin Solid Films;2009-10

3. Optimization of Pt tip field emitter array fabricated using focused ion and electron beams;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2003

4. Prototyping of Field Emitter Array Using Focused Ion and Electron Beams;Japanese Journal of Applied Physics;2002-06-30

5. Fabrication process of field emitter arrays using focused ion and electron beam induced reaction;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2001