A charge compensation method for measuring passivated devices with high extraction voltage-Reference-Cited by-同舟云学术

A charge compensation method for measuring passivated devices with high extraction voltage

Published:1992-03 Issue:1-4 Volume:16 Page:431-438
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Weichert G.,Lackmann R.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Evaluation of passivated integrated circuits using the Scanning Electron Microscope;Everhart;J. Electrochem. Soc.,1964

2. The effect of Passivation on the observation of voltage contrast in the Scanning Electron Microscope;Taylor;J. Phys. D: Appl. Phys.,1978

3. Voltage Contrast methods for semiconductor device failure analysis;Crosthwait;Scann. Electr. Micr.,1974

4. Kapazitiver Potentialkontrast;Görlich;Kolloq. d. Arbeitskreises für Elektronenmikr. Direktabb.,1982

5. Elektronenstrahltestsystem für die Funktionskontrolle und Fehleranalyse Höchstintegrierter Schaltkreise;Menzel,1981

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. State of the art E-Beam probing;Microelectronic Engineering;1996-02

2. E-beam probe station with integrated tool for electron beam induced etching;Microelectronic Engineering;1996-02

3. Investigation of capacitive coupling voltage contrast using a specimen charging model;Microelectronic Engineering;1994-03

4. Principles and Applications;Electron Beam Testing Technology;1993

5. Electron beam testing techniques;Microelectronic Engineering;1992-03