Epitaxial structures of GaAs/GaAlAs on Ge substrates by MOVPE for photovoltaic applications-Reference-Cited by-同舟云学术

Epitaxial structures of GaAs/GaAlAs on Ge substrates by MOVPE for photovoltaic applications

Published:1992-05 Issue:1-2 Volume:18 Page:175-188
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Flores C,Bollani B,Campesato R,Passoni D,Timó G.L

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference6 articles.

1. MOCVD growth of AlGAs and GaAs on Ge substrates;Tobin,1985

2. Heterostructure GaAs/Ge solar cells;Chang,1987

3. Large area growth of extremely uniform AlGaAs/GaAs quantum wells;Schmitz;J. Crys. Growth,1988

4. Misfit dislocations in InGaAs/InP MBE single heterostructures;Franzosi;J. Cryst. Growth,1986

5. High efficiency GaAs solar cells grown on inactive-Ge-substrates;Iles;IEEE Electron Devices Lett.,1990

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