Compound semiconductor devices for operation at elevated temperatures-Reference-Cited by-同舟云学术

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Compound semiconductor devices for operation at elevated temperatures

Published:1992-09 Issue:1-4 Volume:19 Page:115-121
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Hartnagel H.L.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference24 articles.

1. Pressure Measurement by GaAs Piezoelectric Sensors;Fricke;El. Letters,1990

2. Piezoelectric Properties of GaAs for Application in Stress Transducers;Fricke;J. Appl. Physics,1991

3. Microwave Characterization and Comparison of Performance of GaAs Based MESFET, HEMTs and HBTs Operating at High Ambient Temperatures;Fricke,1992

4. Technology and Performance of a High Temperature Stable (up to 300°C) Operational Amplifier on GaAs;Böttner,1991

5. Non alloyed, high temperature stable ohmic contacts to GaAs based on LaB6 diffusion barriers;Würfl,1990

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An overview of high-temperature electronic device technologies and potential applications;IEEE Transactions on Components, Packaging, and Manufacturing Technology: Part A;1994

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