CAMP-6, a deep-UV positive tone resist applied to E-beam exposure-Reference-Cited by-同舟云学术

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CAMP-6, a deep-UV positive tone resist applied to E-beam exposure

Published:1994-01 Issue:1-4 Volume:23 Page:295-298
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Hintermaier Magdalena,Anzinger Hermann,Knapek Erwin

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. High Resolution, Novolak Based Negative Tone Electron Beam Resist

2. Advances in Chemical Amplification Resist Systems

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. HPR 506 photoresist used as a positive tone ion resist;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1996-11

2. E-beam and RIE examination of chemically amplified positive-tone resist CAMP6;Microelectronic Engineering;1995-11

3. On the application of chemically amplified positive resists to micromachining;Microelectronic Engineering;1995-02

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