Optical proximity correction: Mask pattern-generation challenges-Reference-Cited by-同舟云学术

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Optical proximity correction: Mask pattern-generation challenges

Published:1996-01 Issue:1-4 Volume:30 Page:115-118
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Jonckheere R.,Wong A.,Yen A.,Ronse K.,Van den hove L.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference6 articles.

1. Feature biasing versus feature-assisted lithography: a comparison of proximity correction methods for 0.5*(lambda/NA) lithography

2. Microlithography World;Liebmann,1995

3. Sigma-C, Germany

4. TransVector Technologies Inc, USA

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mask process correction for optical weak pattern improvement;Photomask Japan 2019: XXVI Symposium on Photomask and Next-Generation Lithography Mask Technology;2019-06-27

2. Optical proximity correction for 0.3 μm i-line lithography;Microelectronic Engineering;1996-01

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