Nanometer pattern fabrication using a novel X-ray mask with a cross-sectioned metal thin film absorber-Reference-Cited by-同舟云学术

Nanometer pattern fabrication using a novel X-ray mask with a cross-sectioned metal thin film absorber

Published:1991-03 Issue:1-4 Volume:13 Page:315-318
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Horiuchi T.,Deguchi K.,Hirota S.,Yoshikawa A.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference3 articles.

1. Absence of resolution degradation in X-ray lithography for λ from 4.5nm to 0.83nm

2. Proceedings of the 2nd International Symposium on Advanced Nuclear Energy Research;Horiuchi,1990

3. Digest of Papers 1990 MicroProcess Conference;Deguchi,1990

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. X-ray nanolithography: Extension to the limits of the lithographic process;Microelectronic Engineering;1996-09

2. Sub-100 nm space pattern replication by using a cross-sectioned X-ray mask;Microelectronic Engineering;1996-01

3. A simple and compact synchrotron radiation x‐ray exposure system in a vacuum for ultrafine pattern fabrication;Review of Scientific Instruments;1995-12

4. Ultra-Fine Pattern Fabrication by Synchrotron Radiation X-Ray Lithography Using a Shifter-Edge Type Phase-Shifting Mask;Japanese Journal of Applied Physics;1994-05-15

5. Fabrication of X-ray mask for nanolithography by EBL;NANOLITHOGRAPHY: A Borderland between STM, EB, IB, and X-Ray Lithographies;1994