Photoacid catalyzed main chain scission of poly(butene-1 sulfone) as a deep UV positive resist

Author:

Loong Wen-an,Chang Hsien-wu

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Oxidation effect on an x-ray induced reaction of a polyolefinsulfone-type resist;Mochiji;J. Vac. Sci. Technol. B,1988

2. A sensitive, etch resistant, positive tone e-beam resist system;Ito;J. Electrochem. Soc. Solid-State Sci. Technol.,1988

3. Deep UV photolithography with composite photoresists made of poly(olefin sulfones);Hiraoka;Polymers in Electronics, ACS Symp. Ser.,1984

4. Radiation-induced degradation of poly(2-methyl-1-pentene sulfone): Kinetics and mechanism;Bowden;Polymers in Electronics, ACS Symp. Ser.,1984

5. The radiation degradation of poly-(2-methyl-1-pentene sulfone);Bowmer;Polymers in Electronics, ACS Symp. Ser,1984

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