Ti ion valence variation induced by ionizing radiation at TiO2/Si interface
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry
Reference9 articles.
1. Electronic Properties of the Interface between Si and TiO2Deposited at Very Low Temperatures
2. On -radiation and electron beam dose and gate oxide thickness dependence of radiation defects in MOS capacitors
3. The Practice of Precision Analysis Instrument;Cheng,1990
4. Study of titanium oxides using Auger line shapes
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