Peeling analysis of resist line pattern of 170 nm width due to crack formation by using atomic force microscope tip-Reference-Cited by-同舟云学术

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Peeling analysis of resist line pattern of 170 nm width due to crack formation by using atomic force microscope tip

Published:2003-06 Issue: Volume:169-170 Page:311-315
ISSN:0257-8972
Container-title:Surface and Coatings Technology
language:en
Short-container-title:Surface and Coatings Technology

Author:

Inoue Daisuke,Kawai Akira

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference11 articles.

1. Dimensional limitations of silicon nanolines resulting from pattern distortion due to surface tension of rinse water

2. Comparison of resist collapse properties for deep ultraviolet and 193 nm resist platforms

3. Supercritical drying for nanostructure fabrication without pattern collapse

4. Mechanism of Resist Pattern Collapse during Development Process

5. Sub-0.1 µmPatterning with High Aspect Ratio of 5 Achieved by Preventing Pattern Collapse

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Bibliography (1994–2004) of other topics;Modelling and Simulation in Materials Science and Engineering;2004-12-08

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