Electrical characterization of Au/Pd/n-GaN/Pd/Au device structure in the radio frequency range by simulation study

Author:

Kavasoglu A. Sertap,Kavasoglu Nese,Oylumluoglu Gorkem

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference44 articles.

1. GaN-based Materials and Devices: Growth, Fabrication, Characterization & Performance;Davis,2004

2. Improvement of InGaN/GaN light emitting diode performance with a nano-roughened p-GaN surface by excimer laser-irradiation

3. Handbook of Nitride Semiconductors and Devices, vol. 3: GaN-based Optical and Electronic Devices;Morkoc,2008

4. XRD, XPS, SEM, PL and Raman scattering analysis of synthesised GaN powder

5. Device modeling of AlGaN/GaN High Electron Mobility Transistors (HEMTs): An Analytical Approach;Chattopadhyay,2010

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