Analysis of random telegraph noise observed in semiconducting carbon nanotube quantum dots
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference18 articles.
1. High-density integration of carbon nanotubes via chemical self-assembly
2. Carbon nanotube computer
3. Random-Telegraph-Signal Noise and Device Variability in Ballistic Nanotube Transistors
4. Noise characteristics of single-walled carbon nanotube network transistors
5. Discrete Resistance Switching in Submicrometer Silicon Inversion Layers: Individual Interface Traps and Low-Frequency (1f?) Noise
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Random Telegraph Noise of a 28-nm Cryogenic MOSFET in the Coulomb Blockade Regime;IEEE Electron Device Letters;2022-01
2. Stochastic Resonance and Safe Basin of Single-Walled Carbon Nanotubes with Strongly Nonlinear Stiffness under Random Magnetic Field;Nanomaterials;2018-05-04
3. Nonlinear vibration of single-walled carbon nanotubes with nonlinear damping and random material properties under magnetic field;Composites Part B: Engineering;2017-04
4. Impact device processing and scaling on RTS;Random Telegraph Signals in Semiconductor Devices;2017
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