A statistical model for material removal prediction in polishing

Author:

Jin X.L.,Zhang L.C.

Funder

Australian Research Council

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Mechanics of Materials,Condensed Matter Physics

Reference30 articles.

1. Chemical–mechanical polishing: route to global planarization;Martinez;Solid State Technol.,1994

2. Chemical Mechanical Planarization of Microelectronic Materials;Steigerwald,1997

3. Subsurface damage in single-crystal silicon due to grinding and polishing;Zarudi;J. Mater. Sci. Lett.,1996

4. An understanding of the chemical effect on the nano-wear deformation in mono-crystalline silicon components;Zhang;Wear,1999

5. Chemical–Mechanical Polishing in Silicon Processing, Semiconductors and Semimetals, vol. 63;Li,2000

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