Correlated TKD/EDS - TEM - APT analysis on selected interfaces of CoSi2 thin films-Reference-Cited by-同舟云学术

Correlated TKD/EDS - TEM - APT analysis on selected interfaces of CoSi2 thin films

Published:2019-11 Issue: Volume:206 Page:112807
ISSN:0304-3991
Container-title:Ultramicroscopy
language:en
Short-container-title:Ultramicroscopy

Author:

Zschiesche H.,Campos A.P.C.,Dominici C.,Roussel L.,Charai A.,Mangelinck D.,Alfonso C.

Funder

Aix-Marseille Université

Publisher

Elsevier BV

Subject

Instrumentation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference61 articles.

1. Influence of dopant segregation on the work function and electrical properties of Ge-doped in comparison to Sn-doped In2O3 thin films;Hoyer;Phys. Status Solidi (A) Appl.Mater. Sci.,2017

2. Review of grain interior, grain boundary, and interface effects of k in CIGS solar cells: mechanisms for performance enhancement;Muzzillo;Solar Energy Mater. Solar Cells,2017

3. Ferromagnetic behaviour of ZnO: the role of grain boundaries;Straumal;Beilstein J. Nanotechnol.,2016

4. A new approach to grain boundary engineering for nanocrystalline materials;Kobayashi;Beilstein J. Nanotechnol.,2016

5. Correlation between electrical activity and various structures of Ge grain boundaries;Palais;J. Phys. Condens. Matter,2004

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