The influence of inelastic scattering on EFTEM images—exemplified at 20kV for graphene and silicon-Reference-Cited by-同舟云学术

The influence of inelastic scattering on EFTEM images—exemplified at 20kV for graphene and silicon

Published:2013-11 Issue: Volume:134 Page:102-112
ISSN:0304-3991
Container-title:Ultramicroscopy
language:en
Short-container-title:Ultramicroscopy

Author:

Lee Z.,Rose H.,Hambach R.,Wachsmuth P.,Kaiser U.

Publisher

Elsevier BV

Subject

Instrumentation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

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4. Optimum HRTEM image contrast at 20kV and 80kV Exemplified by graphene;Lee;Ultramicroscopy,2012

5. Image formation by inelastically scattered electrons in electron microscopy;Rose;Optik,1976

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