Three-dimensional imaging of individual point defects using selective detection angles in annular dark field scanning transmission electron microscopy-Reference-Cited by-同舟云学术

Three-dimensional imaging of individual point defects using selective detection angles in annular dark field scanning transmission electron microscopy

Published:2017-01 Issue: Volume:172 Page:17-29
ISSN:0304-3991
Container-title:Ultramicroscopy
language:en
Short-container-title:Ultramicroscopy

Author:

Johnson Jared M.,Im Soohyun,Windl Wolfgang,Hwang Jinwoo

Publisher

Elsevier BV

Subject

Instrumentation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference56 articles.

1. Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET;Lansbergen;Nat. Phys.,2008

2. Single dopants in semiconductors;Koenraad;Nat. Mater.,2011

3. R.Krause-Rehberg, S.L.Hartmut, Positron Annihilation in Semiconductors, 1999.

4. Visibility of single heavy atoms on thin crystalline silicon in simulated annular dark-field STEM images;Loane;Acta Crystallogr. Sect. A,1988

5. Atomic-scale imaging of individual dopant atoms and clusters in highly n-type bulk Si;Voyles;Nature,2002

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. On the visibility of GP-zones in 6xxx Al alloys in atomic LAADF-STEM;Materials Characterization;2024-09

2. Al Coordination and Ga Interstitial Stability in a β-(Al_0.2Ga_0.8)₂O₃ Thin Film;ACS Applied Materials & Interfaces;2023-02-01

3. The emergence of analytical techniques for defects in metal oxide;Metal Oxide Defects;2023

4. Visualization of defects in single-crystal and thin-film PdCoO2 using aberration-corrected scanning transmission electron microscopy;Physical Review Materials;2022-09-02

5. Angle-dependence of ADF-STEM intensities for chemical analysis of InGaN/GaN;Ultramicroscopy;2022-08