Direct growth of hexagonal boron nitride films on dielectric sapphire substrates by pulsed laser deposition for optoelectronic applications

Author:

Wang Gaokai,Chen Jingren,Meng JunhuaORCID,Yin Zhigang,Jiang Ji,Tian Yan,Li Jingzhen,Wu Jinliang,Jin Peng,Zhang XingwangORCID

Funder

National Natural Science Foundation of China

Chinese Academy of Sciences

Natural Science Foundation of Beijing Municipality

Publisher

Elsevier BV

Reference45 articles.

1. Hexagonal boron nitride is an indirect bandgap semiconductor;Cassabois;Nat. Photonics,2016

2. Study of direct tunneling and dielectric breakdown in molecular beam epitaxial hexagonal boron nitride monolayers using metal–insulator–metal devices;Cui;ACS Appl. Electron. Mater.,2020

3. Ultralow-dielectric-constant amorphous boron nitride;Hong;Nature,2020

4. Outstanding thermal conductivity of single atomic layer isotope-modified boron nitride;Cai;Phys. Rev. Lett.,2020

5. Modeling and understanding the compact performance of h-BN dual-gated ReS2 transistor;Lee;Adv. Funct. Mater.,2021

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