Photoinduced structural changes in obliquely deposited As- and Ge-based amorphous chalcogenides: correlation between changes in thickness and band gap-Reference-Cited by-同舟云学术

Photoinduced structural changes in obliquely deposited As- and Ge-based amorphous chalcogenides: correlation between changes in thickness and band gap

Published:1998-05 Issue: Volume:227-230 Page:715-718
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Kuzukawa Y,Ganjoo Ashtosh,Shimakawa K

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. Photoinduced effects and metastability in amorphous semiconductors and insulators

2. Reversible photostructural change: Mechanisms, properties and applications

3. A unified model for reversible photostructural effects in chalcogenide glasses

4. Non-radiative recombination in chalcogenide glasses

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