EEPROM cell design: paradoxical choice of the coupling ratio-Reference-Cited by-同舟云学术

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EEPROM cell design: paradoxical choice of the coupling ratio

Published:2003-07 Issue:1-3 Volume:322 Page:246-249
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Canet P.,Bouchakour R.,Lalande F.,Mirabel J.M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. Nonvolatile Semiconductor Memory Technology;Brown,1998

2. Flash Memories;Cappelletti,1999

3. Emerging Memories;Prince,2002

4. A new physical-based compact model of floating-gate EEPROM cells

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Non-volatile memory cell design: Coupling ratio impact on tunnel oxide reliability;Journal of Non-Crystalline Solids;2005-07

2. Integrated reliability in EEPROM nonvolatile memory cell design;Proceedings. 2004 IEEE Computational Systems Bioinformatics Conference

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