Simulations of generation–recombination noise of n–i–n a-Si:H devices using AMPS-1D

Author:

Bakker J.P.R,van der Horst B.J,Dijkhuis J.I

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. Resistance fluctuations in hydrogenated amorphous silicon: Thermal equilibrium

2. g-r noise spectra of semiconductors and insulators with various trap distributions

3. Energy Scales for Noise Processes in Metals

4. S.J. Fonash et al., A manual for AMPS-1D for Windows 95/NT; A one-dimensional device simulation program for the analysis of microelectronic and photonic structures, Pennsylvania State University, 1997. See also http://www.psu/edu/dept/AMPS

5. Amorphous and Microcrystalline Silicon Solar Cells – Modeling, Materials and Device Technology;Schropp,1998

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