Time-of-flight photocurrents in expanding-thermal-plasma-deposited a-Si:H-Reference-Cited by-同舟云学术

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Time-of-flight photocurrents in expanding-thermal-plasma-deposited a-Si:H

Published:2002-04 Issue: Volume:299-302 Page:420-424
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Brinza M,Adriaenssens G.J,Iakoubovskii K,Stesmans A,Kessels W.M.M,Smets A.H.M,van de Sanden M.C.M

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. Hydrogenated amorphous silicon deposited at very high growth rates by an expanding Ar–H2–SiH4 plasma

2. High hole drift mobility in a-Si:H deposited at high growth rates for solar cell application

3. Influence of light intensity on hole transport in a-Si: H transient photocurrents

4. G. Seynhaeve, PhD thesis, Katholieke Universiteit Leuven, 1989

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2. Testing of planar hydrogenated amorphous silicon sensors with charge selective contacts for the construction of 3D-detectors;Journal of Instrumentation;2022-03-01

3. Towards an electronic grade nanoparticle-assembled silicon thin film by ballistic deposition at room temperature: the deposition method, and structural and electronic properties;Journal of Materials Chemistry C;2017

4. Measure of carrier lifetime in nanocrystalline silicon thin films using transmission modulated photoconductive decay;MRS Proceedings;2010

5. Link between enhanced carrier mobilities and DOS profiles in a-Si:H;Thin Solid Films;2006-07

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