Reverse bias annealing of Schottky diodes: evidence for the lower defect density and better stability of polymorphous silicon compared to amorphous silicon-Reference-Cited by-同舟云学术

Reverse bias annealing of Schottky diodes: evidence for the lower defect density and better stability of polymorphous silicon compared to amorphous silicon

Published:2002-04 Issue: Volume:299-302 Page:599-604
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Kleider J.P,Roca i Cabarrocas P

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Measurement of the density of gap states in hydrogenated amorphous silicon by space charge spectroscopy

2. Calculation of the dynamic response of Schottky barriers with a continuous distribution of gap states

3. A new treatment of Schottky barrier capacitance-voltage characteristics: Discussion of usual assumptions and determination of the deep gap states density in a-Si1−xGex:H alloys

4. Structural, optical and electronic properties of hydrogenated polymorphous silicon films deposited at 150°C

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