Comparison between the crystallization processes by laser and furnace annealing of pure and doped a-Si:H
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference14 articles.
1. Kinetic many-body model of recrystallization of pure and doped amorphous silicon
2. Arrhenius parameters and the compensation effect in crystallization and diffusion in amorphous Si:H(F) in the presence or absence of metal contacts
3. Laser-Induced Oscillatory Instabilities in Amorphous Materials
4. Chaneling effect measurements of the recrystallization of amorphous Si layers on crystal Si
5. Compensating impurity effect on epitaxial regrowth rate of amorphized Si
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Phosphorous-Doped $\alpha$ -Si Film Crystallization Using Heat-Assisted Femtosecond Laser Annealing;IEEE Transactions on Semiconductor Manufacturing;2020-02
2. Stress and doping uniformity of laser crystallized amorphous silicon in thin film silicon solar cells;Journal of Applied Physics;2010-03
3. Effect of Implanted Phosphorus Ions on the Crystallization of Amorphous Silicon Films under the Action of Pulsed Excimer Laser Radiation;Technical Physics Letters;2005
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