Kinetics of light-induced defect creation in amorphous silicon: The constant degradation method
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference11 articles.
1. Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study
2. Reinterpretation of degradation kinetics of amorphous silicon
3. The connection between dispersive hydrogen motion and the kinetics of light-induced defects in hydrogenated amorphous silicon
4. Stretched-exponential relaxation arising from dispersive diffusion of hydrogen in amorphous silicon
5. Hydrogen diffusion in amorphous silicon
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Mobility lifetime product—A tool for correlatinga‐Si:H film properties and solar cell performances;Journal of Applied Physics;1996-06-15
2. Photoinduced effects and metastability in amorphous semiconductors and insulators;Advances in Physics;1995-12
3. Creation of electrically active nanoscale structures ina-Si films with a scanning tunneling microscope: Electronically induced changes in atomic bonding configurations;Physical Review B;1994-12-15
4. An alternative degradation method for amorphous hydrogenated silicon: The constant degradation method;Journal of Applied Physics;1994-03
5. Effect of hydrogen dilution in silane on light induced degradation of hydrogenated amorphous silicon films for solar photovoltaic applications;Solar Energy Materials and Solar Cells;1994-01
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