Interpretation of the saturation behaviour of the metastable defect density created in intrinsic a-Si:H by keV-electron irradiation
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference12 articles.
1. Amorphous and microcrystalline semiconductor devices;Stutzmann,1991-1992
2. Kinetics of the metastable optically induced ESR ina-Si:H
3. The creation of metastable defects in a-Si:H films by high dose irradiation with keV-electrons
4. Reinterpretation of degradation kinetics of amorphous silicon
5. AIP Conf. Proc. of the Int. Meeting on Stability of Amorphous Silicon Materials and Solar Cells;Scholz,1991
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