Accelerated metastable defect creation in a-Si:H by short light pulses-Reference-Cited by-同舟云学术

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Accelerated metastable defect creation in a-Si:H by short light pulses

Published:1991-01 Issue: Volume:137-138 Page:231-234
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Stutzmann M.,Nunnenkamp J.,Brandt M.S.,Asano A.,Rossi M.C.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference4 articles.

1. Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study

2. Saturation of the light‐induced defect density in hydrogenated amorphous silicon

3. Reinterpretation of degradation kinetics of amorphous silicon

4. The connection between dispersive hydrogen motion and the kinetics of light-induced defects in hydrogenated amorphous silicon

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1. Effect of ion bombardment on the a-Si:H based surface passivation of c-Si surfaces;Applied Physics Letters;2011-06-13

2. Pulsed-illumination study of metastable defect creation time scales in hydrogenated amorphous silicon;Physical Review B;2004-05-26

3. The hydrogen collision model of metastability after 5 years: experimental tests and theoretical extensions;Solar Energy Materials and Solar Cells;2003-07

4. Light induced defects in sputtered amorphous silicon thin films;Materials Chemistry and Physics;2002-04

5. Memory effects in highly resistive p–i–n heterojunctions for optical applications;Thin Solid Films;2002-02

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