Electroluminescence: A study of non-geminate radiative and non-radiative bulk recombination in a-Si:H-Reference-Cited by-同舟云学术

Electroluminescence: A study of non-geminate radiative and non-radiative bulk recombination in a-Si:H

Published:1991-01 Issue: Volume:137-138 Page:599-602
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Wang Keda,Han Daxing,Kemp M.,Silver M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference4 articles.

1. Current Injection in Solids;Lampert,1970

2. Electroluminescence studies of recombination in hydrogenated amorphous silicon p-i-n devices

3. presented at International Meeting on Stability of a-Si Materials and Solar Cells (Denver, CO, Feb. 1991), to be published as AIP Conf. Proc.;Wang,1991

4. R. Carius, “Electroluminescence in a-Si:H p-i-n Junctions”, to be published in the same proceeding.

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1. Photo- and electro-luminescence of a-Si:H and mixed-phase alloys;Solar Energy Materials and Solar Cells;2003-07

2. Luminescence in amorphous silicon p-i-n diodes under double-injection dispersive-transport-controlled recombination;Physical Review B;1997-06-15

3. Dispersive-Transport-Controlled Luminescence in Hydrogenated Amorphous Silicon;Physical Review Letters;1996-11-18

4. Electroluminescence from hydrogenated amorphous silicon p-i-n diodes;Journal of Non-Crystalline Solids;1995-10

5. Carrier Recombination in A-SI:H P-I-N Devices Studied by PL and EL Spectroscopies;MRS Proceedings;1995