Study of SiO2Si interfaces by photocurrent measurements-Reference-Cited by-同舟云学术

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Study of SiO2Si interfaces by photocurrent measurements

Published:1997-08 Issue: Volume:216 Page:88-94
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Polignano M.L.,Ferroni G.,Sabbadini A.,Valentini G.,Queirolo G.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Unusually Low Surface-Recombination Velocity on Silicon and Germanium Surfaces

2. In situ bulk lifetime measurement on silicon with a chemically passivated surface

3. Heavy metal contamination during integrated-circuit processing: Measurements of contamination level and internal gettering efficiency by surface photovoltage

4. Noncontact minority‐carrier lifetime measurement at elevated temperatures for metal‐doped Czochralski silicon crystals

5. Minority Carrier Diffusion Length Mapping in Silicon Wafers Using a Si‐Electrolyte‐Contact

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Interface recombination velocity measurement in SiO2/Si;Semiconductors;2014-03

2. Simultaneous characterization of bulk impurities and interface states by photocurrent measurements;Applied Surface Science;2004-08

3. Surface characterization by photocurrent measurements;Applied Surface Science;2000-02

4. A Novel Method for the Simultaneous Characterization of Bulk Impurities and Surface States by Photocurrent Measurements;Journal of The Electrochemical Society;2000

5. Surface Recombination Velocity from Photocurrent Measurements: Validation and Applications;Journal of The Electrochemical Society;1999-12-01

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